Memristors can “memorize” the charge, so they can be used as a replacement for transistors.
American scientists have created a single atom thick memory storage device. The density of information written to such a drive is about 100 times greater than that of modern flash drives.
The new device is a memristor, as the scientists call memory elements that change their resistance depending on the electrical charge that has passed through them.
Memristors can “memorize” a charge, so they can be used as a replacement for transistors. Memristors are faster than modern flash memory and can also store more data on them for the same size device.
Previously, it was believed that very thin materials, which are close to the size of the atom, can not be memristors. However, the experiments of a group of scientists led by Deja Akinwande from the University of Texas at Austin (USA) showed that this is not the case.
Two years ago, they demonstrated that almost two-dimensional boron nitride (h-BN)-based material can exhibit memristor properties – it was only one-third of a nanometer thick, i.e. it was three billion times less than a meter. Such a device scientists called atomistor, because its thickness is comparable to the size of one atom.
In a new study, Akinwanda and his colleagues achieved even greater success. Based on a single-atom layer of molybdenum disulfide (MoS2), they have created an even smaller device. Its area is only one square nanometer.
Tests of the device have shown that the density of information recorded on it can be about 25 TB/cm2. This is about 100 times the density of modern flash drives. The scientists hope that if such devices reach industrial production, they will become the basis for neuromorphic computing systems, new radio communications systems and much more.